advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche rated bv dss 700v fast switching r ds(on) 1.4 simple drive requirement i d 7a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 3.4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice parameter 1 7 4.4 7 AP07N70CI-H 140 rating 700 + 30 rohs-compliant product 7 -55 to 150 parameter 200903183 storage temperature range -55 to 150 18 37 linear derating factor 0.3 g d s the to-220cfm package is widely preferred for all commercial- industrial applications. the device is suited for switch mode power supplies, dc-ac converters and high current high speed switching circuits. ap07n70 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. the to-220cfm type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 700 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance 3 v gs =10v, i d =3.5a - - 1.4 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =50v, i d =3.5a - 4.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =480v, v gs =0v - - 500 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge 3 i d =7a - 32 - nc q gs gate-source charge v ds =480v - 8.6 - nc q gd gate-drain ("miller") charge v gs =10v - 9 - nc t d(on) turn-on delay time 3 v dd =300v - 17 - ns t r rise time i d =7a - 15 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 35 - ns t f fall time r d =43 -18- ns c iss input capacitance v gs =0v - 2075 - pf c oss output capacitance v ds =25v - 120 - pf c rss reverse transfer capacitance f=1.0mhz - 8 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 7 a i sm pulsed source current ( body diode ) 1 --18 a v sd forward on voltage 3 t j =25 , i s =7a, v gs =0v - - 1.5 v notes: 1.pulse width limited by maximum junction temperature. 2.starting t j =25 o c , v dd =50v , l=5mh , r g =25 , i as =7a. 3.pulse test herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. AP07N70CI-H apec does not assume any liability arising out of the application or use of any product or circuit described
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP07N70CI-H 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3.5a v g =10v 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 4 8 12 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v 5.0v 10v 6.0v 5.5v 0 3 6 9 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 6.0v 5.5v 5.0v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd ,source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 0 2 4 6 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP07N70CI-H 0 4 8 12 16 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =320v v ds =400v v ds =480v 1 100 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t c =25 single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
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